IPP08CN10L G

IPP08CN10L G OptiMOS®2 Power-Transistor Product Summary Features V DS • N-channel, logic level R DS(on),max 8 m: ID 98 A • Excellent gate charge x R DS(on) product (FOM) 100 V • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP08CN10L G Package PG-TO220-3 Marking 08CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 98 T C=100 °C 70 Pulsed drain current2) I D,pulse T C=25 °C 392 Avalanche energy, single pulse E AS I D=98 A, R GS=25 : 254 Reverse diode dv /dt dv /dt I D=95 A, V DS=80 V, di /dt =100 A/μs, T j,max=175 °C 6 Gate source voltage3) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 0.6 Unit A mJ kV/μs ±20 V 167 W -55 ... 175 °C 55/175/56 page 1 2007-08-30 IPP08CN10L G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.9 minimal footprint - - 62 6 cm2 cooling area 5) - - 40 100 - - Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient 4) - R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=130 μA 1.2 1.85 2.4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V μA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=49 A - 7.7 10.4 m: V GS=10 V, I D=98 A - 6.6 8 - 1.3 - : 83 166 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=98 A J-STD20 and JESD22 2) See figure 3 3) Tjmax=150 °C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 220 200 180 150 160 g fs [S] I D [A] 140 100 120 100 80 60 50 40 175 °C 20 25 °C 0 0 0 2 4 6 Rev. 0.6 0 40 80 120 160 I D [A] V GS [V] page 5 2007-08-30 IPP08CN10L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=98 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 20 2.5 2 1300 μA 130 μA 10 V GS(th) [V] R DS(on) [m:] 15 98 % 1.5 1 typ 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss 25 °C 175 °C, 98% 102 25 °C, 98% I F [A] C [pF] 103 Crss 175 °C 102 101 101 100 0 20 40 60 80 V DS [V] Rev. 0.6 0 0.5 1 1.5 2 V SD [V] page 6 2007-08-30 IPP08CN10L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 : V GS=f(Q gate); I D=98 A pulsed parameter: T j(start) parameter: V DD 1000 12 10 100 V GS [V] I AS [A] 8 25 °C 100 °C 150 °C 10 80 V 50 V 6 20 V 4 2 1 0 1 10 100 1000 0 20 40 60 80 100 Q gate [nC] t AV [μs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 115 V GS Qg V BR(DSS) [V] 110 105 V g s(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 0.6 page 7 2007-08-30 IPP08CN10L G PG-TO220-3: Outline Rev. 0.6 page 8 2007-08-30 IPP08CN10L G Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.6 page 9 2007-08-30